incident intensity meaning in Chinese

入射光强度
入射强度

Fourthly , the incident intensity threshold of the fanning effect in twm was measured in the ce : knsbn crystal , and it is about 20mw / cm , while using 632 . 8nm red light with e polarization as writing beam
实验发现在e偏振光写入情况下， ce ： knsbn晶体中光扇存在写入光强度阈值特性，当写入光强大于20mw cm ~ 2时光扇效应明显增强。
When only the intensity fluctuation is included in the incident light with different parameters of incident intensity and phase , the parameter plane of the folt shows interesting behavior with the changes of colored noise correlation time and multiplicative noise intensity
当入射光仅包含强度涨落时，在入射光强度和位相参量控制下，色噪声相关时间和乘性噪声强度取不同值时发生一级相变类比的参数区域。
As the results , firstly , some steady parameters were determined , including the gain coefficient , diffraction efficiency of the volume grating and response time t1 of twm under different total incident intensity i0 , ratio of two writing beams mo , angle between two writing beams 2 and polarization conditions
论文给出了不同写入光强比、写入总光强、写入光夹角及偏振光下ce ： knsbn晶体的两波耦合增益系数、衍射效率、响应时间的变化规律。